COMPARATIVE ANALYSIS OF SWITCHING LOSSES IN WIDE BANDGAP GALLIUM NITRIDE FIELD-EFFECT TRANSISTORS

Abstract

This paper delivers an in-depth analysis of switching losses in gallium nitride (GaN) field-effect transistors (FETs) vis-à-vis counterparts. The objective is to meticulously quantify these losses and evaluate their repercussions on energy efficiency, furnishing pivotal insights for refining power electronic systems. Wide bandgap semiconductor devices are emerging as potent contenders for power electronics owing to their resilience against elevated voltages and temperatures. Such traits render them invaluable in diverse arenas, including renewable energy, electric vehicles, and industrial automation. Ensuring their proficient operation is paramount to the augmentation of energy conversion systems and curtailment of energy wastage.

A nuanced comparative study contrasting switching losses in wideband semiconductor and silicon devices is presented. The ensuing data underscores the pronounced benefits of wide-bandgap semiconductor devices, with an emphasis on GaN field-effect transistors, in curtailing switching losses. GaN devices manifest notably diminished turn-on and turn-off losses, catalyzing enhanced energy efficiency across multiple domains. The marked decrease in on-state resistance culminates in substantially fewer conduction and switching losses, accentuating their appeal for high-frequency operations.

The discourse underscores the pivotal nature of energy efficiency, illustrating how the mitigated switching losses in GaN field-effect transistors amplify overall system efficacy. This accentuates the potential of wide-bandgap semiconductor devices in bolstering performance and energy conservation within power electronics, spanning electric vehicles, renewable energy systems, and telecommunication power infrastructures.