ARSENIUK, DMYTRO; ZINKOVSKYI, YURIY. COMPARATIVE ANALYSIS OF SWITCHING LOSSES IN WIDE BANDGAP GALLIUM NITRIDE FIELD-EFFECT TRANSISTORS. Herald of Khmelnytskyi National University. Technical sciences, [S. l.], v. 327, n. 5(2), p. 173–177, 2023. DOI: 10.31891/2307-5732-2023-327-5-173-177. Disponível em: https://heraldts.khmnu.edu.ua/index.php/heraldts/article/view/524. Acesso em: 26 jan. 2026.