1.
ARSENIUK D, ZINKOVSKYI Y. COMPARATIVE ANALYSIS OF SWITCHING LOSSES IN WIDE BANDGAP GALLIUM NITRIDE FIELD-EFFECT TRANSISTORS. Herald of Khmelnytskyi National University. Technical sciences. 2023;327(5(2):173-177. doi:10.31891/2307-5732-2023-327-5-173-177